Transistor - Peavey, MJE15032, Complementary Silicon Power

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Transistor - Peavey, MJE15032, Complementary Silicon Power

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MJE 15032, Complimenary silicon power, TO-220AB Case. Designed for use as high−frequency drivers in audio amplifiers

Item ID:
Product Measurements
Base-emitter On Voltage (VBE(on))1.0 V
Base Current (IB)2.0 A
Collector-base Voltage (VCB)250 V
Collector-emitter Saturation Voltage (VCE(sat))0.5 V
Collector-emitter Sustaining Voltage (VCEO(sus))250 V
Collector-emitter Voltage (VCEO)250 V
Collector Current (IC)8.0 A
Collector Current, peak (ICpeak)16 A
Collector Cut-off Current (ICBO)10 μA
Current Gain - Bandwidth Product (fT)30 MHz
D.C. Current Gain (hFE)70
Emitter-base Voltage (VEBO)5.0 V
Emitter Cut-off Current (IEBO)10 μA
Operating And Storage Temperature (TJ, TSTG)-65°C to 150°C
Power Dissipation (PD)50 W
Thermal Resistance, junction to ambient (RθJA)62.5°C/W
Thermal Resistance, junction to case (RθJC)2.5°C/W
Packaging Information
Packaging Dimensions1.1 in. × 0.5 in. × 0.3 in.
Weight (Packaging)0.004 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet70.52 KB

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