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Transistor - MPSA13, Darlington 500mA 30V NPN
NPN Darlington transistor (TO-92 package) - designed for applications requiring extremely high current gain at collector currents to 1.0A.
- Max collector to emitter voltage = 30 V
- Max collector to base voltage = 30 V
- Max emitter to base voltage = 10 V
- Max collector current = 1.2 A (continuous)
RoHS Compliant
| Base-emitter On Voltage (VBE(on)) | 2.0 V | |
| Collector-emitter Breakdown Voltage (V(BR)CES) | 30 V | |
| Collector-emitter Saturation Voltage (VCE(sat)) | 1.5 V | |
| Collector Current (IC) | 500 mA | |
| Collector Cut-off Current (ICBO) | 100 nA | |
| Collector−base Voltage (VCBO) | 30 V | |
| Collector−emitter Voltage (VCES) | 30 V | |
| Current Gain - Bandwidth Product (fT) | 125 MHz | |
| D.C. Current Gain (hFE) | 5,000 | |
| Emitter-base Voltage (VEBO) | 10 V | |
| Emitter Cut-off Current (IEBO) | 100 nA | |
| Operating And Storage Temperature (TJ, TSTG) | -55°C to 150°C | |
| Thermal Resistance, junction to ambient (RθJA) | 200°C/mW | |
| Thermal Resistance, junction to case (RθJC) | 83.3°C/mW | |
| Total Device Dissipation @ TA = 25°C (PD) | 625 mW |
| Packaging Dimensions | 0.75 in. × 0.174 in. × 0.135 in. | |
| Weight (Packaging) | 0.001 lbs. |
 Specification Sheet | All Models |
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