Transistor - Mosfet BS170, Small Signal
MOSFET BS170 N-Channel Transistor. Used in MOD® Kits.
Note - this is a fragile component! Use caution not to overheat or break leads.
|Drain-gate Voltage (VDGR)||60 V|
|Drain-source Breakdown Voltage (BVDSS)||≥ 60 V|
|Drain-source Voltage (VDSS)||60 V|
|Drain Current, continuous (ID)||500 mA|
|Drain current - pulsed (ID)||1.2 A|
|Forward Transconductance (gFS)||320 mS|
|Gate-body Leakage, Forward (IGSSF)||≤ 10 nA|
|Gate-source Voltage (VGSS)||± 20 V|
|Gate Threshold Voltage (VGS(th))||0.8 V - 3 V, 2.1 V typical|
|Input Capacitance (Ciss)||≤ 40 pF, 24 pF typical|
|Lead Temperature for Soldering, maximum (TL)||300°C|
|Operating And Storage Temperature (TJ, TSTG)||-55°C to 150°C|
|Output Capacitance (Coss)||17 pF typical, ≤ 30 pF|
|Power Dissipation, maximum (PD)||830 mW|
|Reverse Transfer Capacitance (Crss)||≤ 10 pF, 7 pF typical|
|Static Drain-source On-resistance (RDS(ON))||≤ 5 Ω, 1.2 Ω typical|
|Thermal Resistance, junction to ambient (RθJA)||150°C/W|
|Turn-off Time (toff)||10 ns|
|Turn-on Time (ton)||10 ns|
|Zero Gate Voltage Drain Current (IDSS)||≤ 0.5 μA|
|Packaging Dimensions||0.8 in. × 0.3 in. × 0.3 in.|
|Weight (Packaging)||0.001 lbs.|
|Specification Sheet||All Models|
My Project Lists
Specifications, Files, and Documents
Questions and Answers
No questions have been asked about this product.
Have a question of your own? Ask us now!