Transistor - Mosfet BS170, Small Signal

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Transistor - Mosfet BS170, Small Signal

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MOSFET BS170 N-Channel Transistor. Used in MOD® Kits.

Note - this is a fragile component! Use caution not to overheat or break leads.

RoHS Compliant
Item ID:
Product Measurements
Drain-gate Voltage (VDGR)60 V
Drain-source Breakdown Voltage (BVDSS)≥ 60 V
Drain-source Voltage (VDSS)60 V
Drain Current, continuous (ID)500 mA
Drain current - pulsed (ID)1.2 A
Forward Transconductance (gFS)320 mS
Gate-body Leakage, Forward (IGSSF)≤ 10 nA
Gate-source Voltage (VGSS)± 20 V
Gate Threshold Voltage (VGS(th))0.8 V - 3 V, 2.1 V typical
Input Capacitance (Ciss)≤ 40 pF, 24 pF typical
Lead Temperature for Soldering, maximum (TL)300°C
Operating And Storage Temperature (TJ, TSTG)-55°C to 150°C
Output Capacitance (Coss)17 pF typical, ≤ 30 pF
Power Dissipation, maximum (PD)830 mW
Reverse Transfer Capacitance (Crss)≤ 10 pF, 7 pF typical
Static Drain-source On-resistance (RDS(ON))≤ 5 Ω, 1.2 Ω typical
Thermal Resistance, junction to ambient (RθJA)150°C/W
Turn-off Time (toff)10 ns
Turn-on Time (ton)10 ns
Zero Gate Voltage Drain Current (IDSS)≤ 0.5 μA
Packaging Information
Packaging Dimensions0.8 in. × 0.3 in. × 0.3 in.
Weight (Packaging)0.001 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet530.15 KB

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