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Transistor - 2N3055, High Power NPN Silicon, TO-3 Case
15 A, 60 V, 115 W
EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.
- Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
- Safe Operating Area - Full Power Rating to 40 V
| Base-emitter Voltage (VBE) | 1.8 V | ||
| Base Current (IB) | 7 A | ||
| Collector-base voltage rating @ IC = 0 (VEBO) | 7 V | ||
| Collector-emitter Saturation Voltage (VCE(sat)) | 1 V - 3 V | ||
| Collector-emitter sustaining voltage @ IB = 0 (VCEO(sus)) | 60 V | ||
| Collector-emitter sustaining voltage @ RBE = 100Ω (VCER(sus)) | 60 V | ||
| Collector-emitter voltage rating @ IB = 0 (VCEO) | 60 V | ||
| Collector-emitter voltage rating @ IE = 0 (VCBO) | 100 V | ||
| Collector-emitter voltage rating @ RBE = 100 Ω (VCER) | 70 V | ||
| Collector Current (IC) | 15 A | ||
| Collector cut-off current @ IB = 0 (ICEO) | 0.7 mA | ||
| Collector cut-off current @ VBE = -1.5 V (ICEX) | 1 mA - 5 mA | ||
| D.C. Current Gain (hFE) | 20 - 70 | ||
| Emitter Cut-off Current (IEBO) | 5 mA | ||
| Operating Temperature (TJ) | 200°C | ||
| Total Dissipation @ TC ≤ 25°C (PTOT) | 115 W | ||
| storage temperature (Tstg) | -65°C to 200°C | ||
| Packaging Dimensions | 1.5 in. × 0.8 in. × 1 in. | ||
| Weight (Packaging) | 0.0287 lbs. | ||
 Specification Sheet | All Models |
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