Transistor - 2N3055, High Power NPN Silicon, TO-3 Case

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Transistor - 2N3055, High Power NPN Silicon, TO-3 Case

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15 A, 60 V, 115 W

EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.

  • Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
  • Safe Operating Area - Full Power Rating to 40 V
Item ID:
Product Measurements by Type
Base-emitter Voltage (VBE)1.8 V
Base Current (IB)7 A
Collector-base voltage rating @ IC = 0 (VEBO)7 V
Collector-emitter Saturation Voltage (VCE(sat))1 V - 3 V
Collector-emitter sustaining voltage @ IB = 0 (VCEO(sus))60 V
Collector-emitter sustaining voltage @ RBE = 100Ω (VCER(sus))60 V
Collector-emitter voltage rating @ IB = 0 (VCEO)60 V
Collector-emitter voltage rating @ IE = 0 (VCBO)100 V
Collector-emitter voltage rating @ RBE = 100 Ω (VCER)70 V
Collector Current (IC)15 A
Collector cut-off current @ IB = 0 (ICEO)0.7 mA
Collector cut-off current @ VBE = -1.5 V (ICEX)1 mA - 5 mA
D.C. Current Gain (hFE)20 - 70
Emitter Cut-off Current (IEBO)5 mA
Operating Temperature (TJ)200°C
Total Dissipation @ TC ≤ 25°C (PTOT)115 W
storage temperature (Tstg)-65°C to 200°C
Packaging Information
Packaging Dimensions1.5 in. × 0.8 in. × 1 in.
Weight (Packaging)0.036 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet88.07 KB

Questions and Answers

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Asked by Anonymous on October 14th, 2017.
Matt H
October 17th, 2017
Unfortunately we are not techs and do not know what transistor is used in this situation.

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