Transistor - 2N2484, Silicon, TO-18 case, NPN

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Transistor - 2N2484, Silicon, TO-18 case, NPN

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The 2N2484 is a silicon planar epitaxial NPN transistor in a TO-18 metal case type. The 2N2484 is primarily intended for use in high performance, low level, low noise amplifier applications.

Pinout (bottom view):

Pinout (bottom view)
Max. Base Emitter on Voltage VBE(on) IC=0.1mA, VCE=5V0.7 V
Max. Collector Base Voltage60 V
Max. Collector Current Continuous50 mA
Max. Collector Cutoff Current ICBO VCB=45V, IE=010 nA
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=1mA,IB=0.1mA0.35 V
Max. Collector Emitter Voltage60 V
Max. DC Current Gain (hFE) IC=10mA,VCE=5V800
Max. DC Current Gain (hFE) IC=10uA, VCE=5V500
Max. Emitter Base Voltage6.0 V
Max. Emitter Cutoff Current IEBO VEB=5V, IC=010 nA
Max. Operating And Storage Junction Temperature Range Tj, Tstg-65 to +200 deg C
Max. Power Dissipation @Ta=25 degC360 mW
Max. Power Dissipation @Tc=25 degC1.20 W
Min. Base Emitter on Voltage VBE(on) IC=0.1mA, VCE=5V0.5 V
Min. Collector Base Voltage VCBO IC=10uA.IE=060 V
Min. Collector Emitter Voltage VCEO** IC=10mA,IB=060 V
Min. DC Current Gain (hFE) IC=1mA, VCE=5V250
Min. DC Current Gain (hFE) IC=1uA, VCE=5V30
Min. DC Current Gain (hFE) IC=10uA, VCE=5V20
Min. DC Current Gain (hFE) IC=100uA, VCE=5V175
Min. DC Current Gain (hFE) IC=500uA, VCE=5V200
Min. Emitter Base Voltage VEBO IE=10uA, IC=-06.0 V
Small Signal Current Gain (hfe) IC=1mA, VCE=5V150-900
Packaging Information
Packaging Dimensions0.739 in. × 0.252 in. × 0.252 in.
Weight (Packaging)0.0029 lbs.

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Specifications, Files, and Documents

PNG: Pinout (bottom view) Pinout (bottom view)13.3 KB
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