Transistor - 2N1711, Silicon, TO-39 case, NPN

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Transistor - 2N1711, Silicon, TO-39 case, NPN

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The 2N1711 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is intended for use in high performance amplifiers, oscillators and switching circuits. The 2N1711 is a great choice for amplifiers where low noise is an important factor.


Max. Base Emitter Saturation Voltage1.3 V
Max. Collector Base Voltage75 V
Max. Collector Emitter Saturation Voltage0.5 V
Max. Collector Emitter Voltage, RBE < 10Ω50 V
Max. DC Current Gain (hFE) IC=150mA, VCE=10V300
Max. Emitter Base Voltage7 V
Max. Emitter Cutoff Current5 nA
Max. Input Capacitance80 pF
Max. Operating and Storage Junction Temperature Range-65 to +200 ºC
Max. Output Capacitance25 pF
Max. Power Dissipation at Ta=25ºC800 mW
Max. Power Dissipation at Tc=25ºC3 W
Min. DC Current Gain (hFE) C=500mA, VCE=10V40
Min. DC Current Gain (hFE) IC=0.01mA, VCE=10V20
Min. DC Current Gain (hFE) IC=0.1mA, VCE=10V35
Min. DC Current Gain (hFE) IC=10mA, VCE=10V75
Min. DC Current Gain (hFE) IC=10mA, VCE=10V, Ta= -55ºC35
Min. DC Current Gain (hFE) IC=150mA, VCE=10V100
Min. Transition Frequency70 MHz
Noise Figure8dB
Small Signal Current Gain (hfe) IC=1mA, VCB=5V, f=1KHz50-200
Small Signal Current Gain (hfe) IC=5mA, VCB=10V, f=1KHz70-300
Packaging Information
Packaging Dimensions0.785 in. × 0.396 in. × 0.396 in.
Weight (Packaging)0.0037 lbs.
PNG: PinoutAll Models

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PNG: Pinout Pinout13.81 KB
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