Semiconductors

P-Q1N4005 Diode - 1A 600V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.15
P-Q1N4007 Diode - 1A 1000V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.15
P-Q1N4741A Diode - Zener, 1W, 11V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.15
P-Q1N4748A Diode - Zener, 1W, 22V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.15
P-Q1N4006 Diode - 1A 800V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.20
P-Q1N4937 Diode - Fast Recovery, 1A, 600V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.20
P-Q2N5088 Transistor - 2N5088, Bipolar, General Purpose
2N5088 NPN Bipolar Junction Transistor in TO-92 package
$0.20
P-QMJE15029 Transistor - Kustom, MJE15029 PNP Bipolar Power
MJE15029 PNP bipolar power transistor (TO-220 package). Designed for use as high-frequency drivers in audio amplifiers.
  • Max collector to emitter voltage = 120 V
  • Max collector to base voltage = 120 V
  • Max emitter to base voltage = 5 V
  • Max collector current (continuous) = 8 A
$0.22
Save 45%
Originally: $0.40
P-QMPSA13 Transistor - MPSA13, Darlington 500mA 30V NPN
NPN Darlington transistor (TO-92 package) - designed for applications requiring extremely high current gain at collector currents to 1.0A.
  • Max collector to emitter voltage = 30 V
  • Max collector to base voltage = 30 V
  • Max emitter to base voltage = 10 V
  • Max collector current = 1.2 A (continuous)
$0.30
P-Q1N5404 Diode - 3A 400V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.35
P-Q1N5408 Diode - 1N5408
1N5408 Diode
  • 1000V
  • 3A
$0.38
P-Q2N5400 Transistor - Peavey, 2N5400, PNP Amp, 120V, 20MA, TO-92
2N5400 (761), PNP general purpose amp, 120V, 10mA, TO-92 case.
$0.45
P-Q971 Diode - 1N4148A
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.50
P-L300X LED - 3mm
Package of 5
Colors Available:
Package of 5. Color: Yellow, red, or green Lens Diam: 3 mm Overall Height: 5.4 mm Lens Type: Diffused Multiple color options available.
$0.65
P-QTL072 Integrated Circuit - TL072, Dual Op-Amp
Integrated Circuit (DIP)
$0.70
P-Q4558 Integrated Circuit - 4558, Dual Op-Amp
Dual Operational Amplifier. The 4558 integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of the dual device in single NJM741 operational amplifier applications providing density. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matched channels are mandatory.
Features:
  • Operating Voltage ( ±4V~±18V )
  • High Voltage Gain ( 100dB typ. )
  • High Input Resistance ( 5MΩ typ. )
  • Bipolar Technology
$0.75
P-QPF5102 Transistor - JFET N-Ch Transistor Lo Freq/Lo Noise, PF5102
PF5102 N-Channel Switch (TO-92 package) - designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. (See J111 for characteristics).
  • Max drain to gate voltage = 40 V
  • Max gate to source voltage = -40 V
  • Max forward gate current = 50 m
$0.75
P-QTIP41C Transistor - TIP41C, NPN Epitaxial Transistor
Transistor TIP41C, TO-220 Case.
NPN Epitaxial Silicon Transistor
Complementary to TIP42 (P-QTIP42C)
Max ratings:
  • Collector-Base voltage = 100V
  • Collector-Emitter Voltage = 100V
  • Emitter-Base Voltage = 5V
  • Collector current (DC) = 6A
  • Collector current (Pulse) = 10A
  • Base current = 2A
$0.80
P-QTIP42C Transistor - TIP42C, PNP Epitaxial Transistor
Transistor TIP42C, TO-220 Case.
PNP Epitaxial Silicon Transistor
Complementary to TIP41 (P-QTIP41C)
Max ratings:
  • Collector-Base voltage = -100V
  • Collector-Emitter Voltage = -100V
  • Emitter-Base Voltage = -5V
  • Collector current (DC) = -6A
  • Collector current (Pulse) = -10A
  • Base current = -2A
$0.80
P-QBR-34 Rectifier - Bridge, 3A 400V
A full wave rectifier with 4 elements in a bridge circuit so that DC voltage is obtained from one pair of junctions when an AC voltage is applied to another pair of junctions.
$0.95
P-QNE5532 Integrated Circuit - NE5532, Low-Noise Dual Op-Amp
This a high performance dual low noise operational amplifier. Compared to the standard dual operational amplifiers, such as the NJM1458, it shows better noise performance, improved output drive capability, and considerably higher small-signal and power bandwidths. it is compensated internally for voltage follower circuit. This makes the device especially suitable for application in high quality and professional audio equipment, instrumentation, control circuits, and telephone channel amplifiers
Features:
  • Operating Voltage = ±3V~±22V
  • Small Signal Bandwidth = 10MHz typ.
  • Output Drive Capability = 600Ω,10Vrms typ.
  • Input Noise Voltage = 5nV/√Hz typ.
  • Power Bandwidth = 140kHz typ.
  • Slew Rate = 8V/µs typ.
  • Bipolar Technology
$1.15
P-QTL074 Integrated Circuit - TL074, Quad Op-Amp
Low noise JFET quad operational amplifier. Incorporates well matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. Features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficients.
Features:
  • Wide common-mode and differential voltage range
  • Low input bias and offset current
  • Low noise en = 15 nV/HZ
  • Output short-circuit protection
  • High input impedance JFET input stage
  • Low harmonic distortion: 0.01%
  • Internal frequency compensation
  • Latch up free operation
  • High slew rate: 16 V/us (typical)
$1.15
P-QBS170 Transistor - Mosfet BS170, Small Signal
MOSFET BS170 N-Channel Transistor. Used in MOD® Kits.
Note - this is a fragile component! Use caution not to overheat or break leads.
$1.25
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