Diode - Hexfred, ultrafast soft recovery, 16A, 1200V

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Diode - Hexfred, ultrafast soft recovery, 16A, 1200V

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High performance, ultrafast diodes. Improve efficiency, reduce noise, allow higher frequency operation. This is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques, it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the diode is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The diode is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.


  • Ultrafast and ultrasoft recovery
  • Very low IRRM and Qrr
Item ID:
RoHS Compliant
Product Measurements by Type
Cathode to Anode Breakdown Voltage (VBR)≥ 1,200 V
Cathode to Anode Voltage (VR)1200 V
Forward Current, maximum (IF)16 A
Forward Voltage, maximum @ IF = 16 A (VFM)≤ 3.0 V, 2.5 V typical
Forward Voltage, maximum @ IF = 32 A (VFM)≤ 3.93 V, 3.2 V typical
Junction Capacitance (CJ)27 pF typical, ≤ 40 pF
Lead temperature (Tlead)≤ 300°C
Operating And Storage Temperature (TJ, TSTG)-55°C to 150°C
Peak Recovery Current (IRRM)5.8 A typical, ≤ 10 A
Power Dissipation, maximum @ 25°C (PD)151 W
Power Dissipation, maximum @ 100°C (PD)60 W
Repetitive Forward Current, maximum (IFRM)64 A
Reverse Leakage Current, maximum (IRM)≤ 20 μA, 0.75 μA typical
Reverse Recovery Charge (Qrr)≤ 675 nC, 260 nC typical
Reverse recovery time (trr)30 ns
Series Inductance (LS)8.0 nH
Single Pulse Forward Current (IFSM)190 A
Thermal Resistance, case to heatsink (RθCS)0.50 K/W
Thermal Resistance, junction to ambient (RθJA)80 K/W
Thermal Resistance, junction to case (RθJC)0.83 K/W
Packaging Information
Packaging Dimensions1.4 in. × 0.6 in. × 0.2 in.
Weight (Packaging)0.012 lbs.

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PDF: Specification Sheet Specification Sheet154.75 KB

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