Diode - General purpose rectifier, 1A, 1N400X

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Diode - General purpose rectifier, 1A, 1N400X

Starting at: $0.15
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A semiconductor device which passes current in the forward direction (from anode to cathode), and blocks current in the opposite direction.

Features:

  • Low forward voltage drop
  • High surge current capability
RoHS Compliant
SKU:
P-Q1N400X
Item ID:
003202
Type:
Part Numbers
Peak Reverse Voltage (VRRM)Our Part NumberUPC/EAN
600 VP-Q1N4005609722129831
800 VP-Q1N4006841358103018
1000 VP-Q1N4007609722129848
Product Measurements by Type
Forward Voltage @ 1.0 A (VF)1.1 V
Full Load Reverse Current, maximum, Full Cycle (Irr)30 μA
Non-repetitive Peak Forward Surge Current (IFSM)30 A
Operating Temperature (TJ)-55°C to 175°C
Peak Repetitive Reverse Voltage (VRRM)600 V versionP-Q1N4005600 V
800 V versionP-Q1N4006800 V
1000 V versionP-Q1N40071,000 V
Power Dissipation (PD)3.0 W
Rating for Fusing (I2t)3.7 A2sec
Rectified Forward Current, average (IF)1.0 A
Reverse Current @ Rated VR, TA = 25 °C5.0 μA
Reverse Current @ Rated VR, TA = 100 °C50 μA
Thermal Resistance, junction to ambient (RθJA)50°C/W
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT)15 pF
storage temperature (Tstg)-55°C to 175°C
Packaging Information
Packaging Dimensions2.3 in. × 0.1 in. × 0.1 in.
Weight (Packaging)0.001 lbs.
Product Measurements by Item
P-Q1N4005 - 600 V versionForward Voltage @ 1.0 A (VF)1.1 V
Full Load Reverse Current, maximum, Full Cycle (Irr)30 μA
Non-repetitive Peak Forward Surge Current (IFSM)30 A
Operating Temperature (TJ)-55°C to 175°C
Peak Repetitive Reverse Voltage (VRRM)600 V
Power Dissipation (PD)3.0 W
Rating for Fusing (I2t)3.7 A2sec
Rectified Forward Current, average (IF)1.0 A
Reverse Current @ Rated VR, TA = 25 °C5.0 μA
Reverse Current @ Rated VR, TA = 100 °C50 μA
Thermal Resistance, junction to ambient (RθJA)50°C/W
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT)15 pF
storage temperature (Tstg)-55°C to 175°C
P-Q1N4006 - 800 V versionForward Voltage @ 1.0 A (VF)1.1 V
Full Load Reverse Current, maximum, Full Cycle (Irr)30 μA
Non-repetitive Peak Forward Surge Current (IFSM)30 A
Operating Temperature (TJ)-55°C to 175°C
Peak Repetitive Reverse Voltage (VRRM)800 V
Power Dissipation (PD)3.0 W
Rating for Fusing (I2t)3.7 A2sec
Rectified Forward Current, average (IF)1.0 A
Reverse Current @ Rated VR, TA = 25 °C5.0 μA
Reverse Current @ Rated VR, TA = 100 °C50 μA
Thermal Resistance, junction to ambient (RθJA)50°C/W
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT)15 pF
storage temperature (Tstg)-55°C to 175°C
P-Q1N4007 - 1000 V versionForward Voltage @ 1.0 A (VF)1.1 V
Full Load Reverse Current, maximum, Full Cycle (Irr)30 μA
Non-repetitive Peak Forward Surge Current (IFSM)30 A
Operating Temperature (TJ)-55°C to 175°C
Peak Repetitive Reverse Voltage (VRRM)1,000 V
Power Dissipation (PD)3.0 W
Rating for Fusing (I2t)3.7 A2sec
Rectified Forward Current, average (IF)1.0 A
Reverse Current @ Rated VR, TA = 25 °C5.0 μA
Reverse Current @ Rated VR, TA = 100 °C50 μA
Thermal Resistance, junction to ambient (RθJA)50°C/W
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT)15 pF
storage temperature (Tstg)-55°C to 175°C

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet89.16 KB

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