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Diode - 1N5818, Schottky, High Switching Speed
1N5818 schottky diode with low forward voltage drop and high switching speeds.
- Very small conduction losses
- Negligible switching losses
- Extremely fast switching
- Low forward voltage drop
- Avalanche capability specified
RoHS Compliant
| Average forward current | 1 A | ||
| Critical rate of rise of reverse voltage | 10000 V/µs | ||
| Forward rms current | 10 A | ||
| Maximum operating junction temperature | 150 °C | ||
| Repetitive peak avalanche power | 1200 W | ||
| Repetitive peak reverse voltage | 30 V | ||
| Storage temperature range | -65 to + 150 °C | ||
| Surge non repetitive forward current | 25 A | ||
| Packaging Dimensions | 2.299 in. × 0.108 in. × 0.108 in. | ||
| Weight (Packaging) | 0.0033 lbs. | ||
 Datasheet | All Models |
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