Transistor - MJ15022, NPN, Power Transistor
Transistor MJ15022, TO-3 Case, NPN
PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.
Features
- High Safe Operating Area (100% Tested) −2 A @ 80 V
- High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc
Base-emitter On Voltage (VBE(on)) | 2.2 V | ||
Base Current - Continuous (IB) | 5 A | ||
Collector-base Voltage (VCBO) | 350 V | ||
Collector-emitter Saturation Voltage (VCE(sat)) | 1.4 V | ||
Collector-emitter Sustaining Voltage (VCEO(sus)) | 200 V | ||
Collector-emitter Voltage (VCEO) | 200 V | ||
Collector-emitter Voltage (VCEX) | 400 V | ||
Collector Current (IC) | 15 A | ||
Collector Current, peak (ICpeak) | 30 A | ||
Collector Cut-off Current (ICEX) | 250 μA | ||
Current Gain - Bandwidth Product (fT) | 4 MHz | ||
D.C. Current Gain (hFE) | 15 - 60 | ||
Emitter-base Voltage (VEBO) | 5 V | ||
Emitter Cut-off Current (IEBO) | 500 μA | ||
Operating And Storage Temperature (TJ, TSTG) | -65°C to 200°C | ||
Output Capacitance (COB) | 500 pF | ||
Thermal Resistance, junction to case (RθJC) | 0.70°C/W | ||
Total Device Dissipation @ TA = 25°C (PD) | 250 W |
Packaging Dimensions | 1.6 in. × 1 in. × 0.9 in. | ||
Weight (Packaging) | 0.0265 lbs. |
Specification Sheet | All Models |
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