Diode - General purpose rectifier, 1A, 1N400X
A semiconductor device which passes current in the forward direction (from anode to cathode), and blocks current in the opposite direction.
Features:
- Low forward voltage drop
- High surge current capability
Peak Reverse Voltage (VRRM) | Our Part Number | UPC/EAN |
---|---|---|
50 V | P-Q1N4001 | |
600 V | P-Q1N4005 | 609722129831 |
800 V | P-Q1N4006 | 841358103018 |
1000 V | P-Q1N4007 | 609722129848 |
Forward Voltage @ 1.0 A (VF) | 1.1 V | ||
Full Load Reverse Current, maximum, Full Cycle (Irr) | 600 V version | P-Q1N4005 | 30 μA |
800 V version | P-Q1N4006 | 30 μA | |
1000 V version | P-Q1N4007 | 30 μA | |
Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | ||
Operating Temperature (TJ) | -55°C to 175°C | ||
Peak Repetitive Reverse Voltage (VRRM) | 50 V version | P-Q1N4001 | 50 V |
600 V version | P-Q1N4005 | 600 V | |
800 V version | P-Q1N4006 | 800 V | |
1000 V version | P-Q1N4007 | 1,000 V | |
Power Dissipation (PD) | 600 V version | P-Q1N4005 | 3.0 W |
800 V version | P-Q1N4006 | 3.0 W | |
1000 V version | P-Q1N4007 | 3.0 W | |
Rating for Fusing (I2t) | 50 V version | P-Q1N4001 | 3.6 A2sec |
600 V version | P-Q1N4005 | 3.7 A2sec | |
800 V version | P-Q1N4006 | 3.7 A2sec | |
1000 V version | P-Q1N4007 | 3.7 A2sec | |
Rectified Forward Current, average (IF) | 1.0 A | ||
Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | ||
Reverse Current @ Rated VR, TA = 100 °C | 50 μA | ||
Thermal Resistance, junction to ambient (RθJA) | 600 V version | P-Q1N4005 | 50°C/W |
800 V version | P-Q1N4006 | 50°C/W | |
1000 V version | P-Q1N4007 | 50°C/W | |
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | ||
storage temperature (Tstg) | 600 V version | P-Q1N4005 | -55°C to 175°C |
800 V version | P-Q1N4006 | -55°C to 175°C | |
1000 V version | P-Q1N4007 | -55°C to 175°C |
Packaging Dimensions | 2.3 in. × 0.1 in. × 0.1 in. | ||
Weight (Packaging) | 0.002 lbs. |
P-Q1N4005 - 600 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
Operating Temperature (TJ) | -55°C to 175°C | |
Peak Repetitive Reverse Voltage (VRRM) | 600 V | |
Power Dissipation (PD) | 3.0 W | |
Rating for Fusing (I2t) | 3.7 A2sec | |
Rectified Forward Current, average (IF) | 1.0 A | |
Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
storage temperature (Tstg) | -55°C to 175°C | |
P-Q1N4006 - 800 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
Operating Temperature (TJ) | -55°C to 175°C | |
Peak Repetitive Reverse Voltage (VRRM) | 800 V | |
Power Dissipation (PD) | 3.0 W | |
Rating for Fusing (I2t) | 3.7 A2sec | |
Rectified Forward Current, average (IF) | 1.0 A | |
Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
storage temperature (Tstg) | -55°C to 175°C | |
P-Q1N4007 - 1000 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
Operating Temperature (TJ) | -55°C to 175°C | |
Peak Repetitive Reverse Voltage (VRRM) | 1,000 V | |
Power Dissipation (PD) | 3.0 W | |
Rating for Fusing (I2t) | 3.7 A2sec | |
Rectified Forward Current, average (IF) | 1.0 A | |
Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
storage temperature (Tstg) | -55°C to 175°C | |
P-Q1N4001 - 50 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
Operating Temperature (TJ) | -55°C to 175°C | |
Peak Repetitive Reverse Voltage (VRRM) | 50 V | |
Rating for Fusing (I2t) | 3.6 A2sec | |
Rectified Forward Current, average (IF) | 1.0 A | |
Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF |
Datasheet for 50 V | P-Q1N4001 |
Specification Sheet for 1000 V | P-Q1N4007 |
Specification Sheet for 600 V | P-Q1N4005 |
Specification Sheet for 800 V | P-Q1N4006 |
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Questions? Contact us at [email protected], or give us a call at 480-296-0890
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